Entries by martin_hsieh

Attopsemi’s I-fuse OTP Passed 3 lots of HTS and HTOL Qualification for 1,000hr on GLOBALFOUNDRIES 22FDX FD-SOI Technology

Attopsemi’s I-fuse™ provides small size, high reliability, low program voltage/current, low power and wide temperature to enable GLOBALFOUNDRIES 22nm FDX® for AI, IoT, automotive, industry, and communication applications Santa Clara, California — April 1, 2019 Attopsemi, an OTP IP provider, announced today that the company’s 256Kb OTP (One-Time Programmable) IP, manufactured on GLOBALFOUNDRIES (GF®) 22FDX® technology, passed […]

Attopsemi’s I-fuse OTP worked at 0.4V and 1uW read on GLOBALFOUNDRIES 22nm FD-SOI for Fraunhofer Institute for Photonic Microsystems’ (IPMS) battery-less 61GHz RFID tags

Attopsemi’s I-fuse™ OTP provides ultra-low read voltage/current, ultra-low program voltage/current, small size and wide temperature to enable GLOBALFOUNDRIES 22nm FD-SOI for Fraunhofer Institute for Photonic Microsystems’ (IPMS) 61GHz RFID tags in IoT applications. Santa Clara, California — November 19, 2018 Attopsemi Technology, a revolutionary OTP IP vendor, announced today that it recently had 64×1 OTP […]

Attopsemi Technology Published a Paper for the IEEE S3S Conference in October 16-19 2017, San Francisco

Hsinchu, Taiwan – October 30, 2017 Attopsemi Technology published a paper “32Kb Innovative Fuse (I-Fuse) Array in 22nm FD-SOI with 0.9V/1.4mA Program Voltage/Current and 0.744um2 Cell” for the 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S). Held in October 16-19, 2017 in San Francisco, IEEE S3S Conference is the only conference dedicated to SOI, 3D […]

Fraunhofer IIS Joins GLOBALFOUNDRIES FDXcelerator Program to Enable Dynamic Biasing IPs

Erlangen, Germany – April 25, 2017 The Fraunhofer Institute for Integrated Circuits IIS, a leading applied research and development center for ASIC, system-on-chip (SoC), and IP, today announced that it will offer dynamic biasing IPs for advanced SoC designs in GLOBALFOUNDRIES’ 22FDX® technology. This new capability offers dynamic adaption of block level performance versus power […]

ATTOPSEMI Technology Joins FDXcelerator Program to Deliver Advanced Non-Volatile Memory IP to GLOBALFOUNDRIES 22 FDX Technology Platform

Leading-edge I-fuse™ brings higher reliability, smaller cell size and ease of programmability for consumer, automotive, and IoT applications Santa Clara, Calif., March 27, 2017 ATTOPSEMI Technology, Ltd. today announced that it has joined GLOBALFOUNDRIES’ FDXcelerator™ Partner Program, to provide a scalable, non-volatile one-time programmable (OTP) memory IP to be compatible with GF’s 22FDX® technology. ATTOPSEMI’s leading-edge […]

Vanguard International Completed Qualifying Attopsemi’s OTP in several CMOS nodes

Hsinchu, Taiwan – December 4, 2016 Attopsemi proudly announces that Vanguard International Semiconductor (VIS) Corporation has completed qualifying Attopsemi’s proprietary OTP IPs in several of their process nodes under unprecedented high temperature. Attopsemi’s fuse-based OTP, I-fuse™, has small size, low voltage, low power, high reliability, and wide temperature capabilities to enable Vanguard’s wafers in industry, […]

Eminent Reached 10 Millions of Successful Production Chips Incorporating Attopsemi’s I-Fuse OTP

Hsinchu, Taiwan – August 26, 2016 Attopsemi announced today that its customer Eminent Electronic Technology, a leading fabless sensor IC company successfully embedded I-Fuse™’s OTP IP at UMC’s 0.35um mixed-signal process in proximity sensor products, and had shipped more than 10 millions of these chips for name-brand smartphones. “Attopsemi’s I-fuse™ OTP provides small size, high […]

Attopsemi Published a Paper in ICMTS 2016, Yokohama, Japan

Hsinchu, Taiwan – May 2, 2016 Attopsemi published a paper “Ultra-small and Ultra-reliable Innovative Fuse Scalable from 0.35um to 28nm” in 2016 International Conference on Microelectronic Test Structures (ICMTS). ICMTS was held in March 28 to 31, 2016 in Yokohama Japan and is the only conference dedicated to semiconductor test structures. In the well-received paper, […]

I-fuse: A disruptive OTP technology for with excellent manufacturability

I-fuse* is a disruptive fuse-based OTP technology based on true electromigration with excellent manufacturability. Conventional ways of programming a fuse is by applying a large current to break the fuse such that the program behavior is like an explosion. The debris created during the explosion may micro-bridge again and grow back to cause several reliability […]