{"id":8836,"date":"2019-10-23T14:18:44","date_gmt":"2019-10-23T06:18:44","guid":{"rendered":"https:\/\/www.attopsemi.com\/attopsemi-published-two-papers-about-innovative-i-fuse-0-4v-1ua-read-and-250c-bake-reliability-data-on-22nm-fd-soi-at-ieee-s3s-conference-2019\/"},"modified":"2023-06-19T10:18:52","modified_gmt":"2023-06-19T02:18:52","slug":"attopsemi-published-two-papers-about-innovative-i-fuse-0-4v-1ua-read-and-250c-bake-reliability-data-on-22nm-fd-soi-at-ieee-s3s-conference-2019","status":"publish","type":"post","link":"https:\/\/www.attopsemi.com\/zh-hant\/attopsemi-published-two-papers-about-innovative-i-fuse-0-4v-1ua-read-and-250c-bake-reliability-data-on-22nm-fd-soi-at-ieee-s3s-conference-2019\/","title":{"rendered":"Attopsemi Published Two Papers About Innovative I-fuse\u2122 0.4V\/1uA read and 250\u00b0C Bake Reliability Data on 22 nm FD-SOI at IEEE S3S Conference, 2019."},"content":{"rendered":"<p><strong>Santa Clara, California, Oct. 23, 2019<\/strong><\/p>\n<p>Attopsemi Technology, a revolutionary fuse-based OTP IP provider, published two papers at IEEE S3S conference on October 14th and 15th, 2019 titled &#8220;High Temperature Reliability Studies of Innovative Fuse Programming Mode&#8221; and &#8220;A 64&#215;1 Fuse Memory with 0.4V\/1\u03bcA Read and 0.9V Program Voltage on 22 nm FD-SOI&#8221; attracted lots of attentions from the audience.<\/p>\n<p>&#8220;Battery-less IoT requires 0.4V\/1uA read for energy harvest. The conventional OTP needs high voltage and high current to program such that low voltage\/low current reads are almost impossible.&#8221; said Shine Chung, Chairman of Attopsemi. &#8220;However, the non-explosive I-fuse\u2122 made 0.9V programming possible to enable low voltage read. We invented a time-based sensing technique, never used in memory design before, to achieve 1uA read current. By comparing the discharge rates of two capacitors through an I-fuse\u2122 and a reference resistor so as to determine if the I-fuse\u2122 resistance is higher or lower than the reference.&#8221;<\/p>\n<p>&#8220;The high reliability of the I-fuse\u2122 baked at 250\u00b0C for 1,000hr was studied thoroughly in this paper. Not only the post-programmed I-fuse\u2122 cell current distributions are Gaussian-like, the post-stressed distributions are also Gaussian-like. There are almost no drifts in cell currents if programmed at nominal or lower programming voltages. &#8221; stated by Shine Chung.<\/p>\n<p>These two papers marked important milestones in OTP development history. The first paper showed I-fuse\u2122 can be read at low voltage and low current for ultra-low energy harvest applications, after proving I-fuse\u2122 can be programmed at near core voltage. The other paper showed I-fuse\u2122 can sustain 250\u00b0C for 1,000hr without any fuse resistance changes, which is the only OTP to meet and surpass AEC-Q100 Grade 0 specifications.<\/p>\n<p><img decoding=\"async\" src=\"https:\/\/www.design-reuse-embedded.com\/IMAGES\/news\/20191024\/fig1.jpg\" \/>\u00a0<img decoding=\"async\" src=\"https:\/\/www.design-reuse-embedded.com\/IMAGES\/news\/20191024\/fig2.jpg\" \/><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Santa Clara, California, Oct. 23, 2019 Attopsemi Techno [&hellip;]<\/p>\n","protected":false},"author":19,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[104,109],"tags":[],"class_list":["post-8836","post","type-post","status-publish","format-standard","hentry","category-104","category-2019-zh-hant"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v26.9 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Attopsemi Published Two Papers About Innovative I-fuse\u2122 0.4V\/1uA read and 250\u00b0C Bake Reliability Data on 22 nm FD-SOI at IEEE S3S Conference, 2019. - 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